FCB20N60TM

proprietary, new generation, high voltage MOSFET, TO-263, 600 V, 690 mJ, 208W, RoHS Compliant

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Price:: US $0.50~0.80 / piece [Get Latest Price]

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PartNumber:: FCB20N60TM

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-08

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Part Number:FCB20N60TM
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Product Summary

The FCB20N60TM is a proprietary, new generation, high voltage MOSFET utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize con-duction loss, provide superior switching performance, and with-stand extreme dv/dt rate and higher avalanche energy. Consequently, the FCB20N60TM is very suitable for various AC/DC power conversion in switching mode operation for system min-iaturization and higher efficiency.

Parametrics

FCB20N60TM absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 600 V; (2)ID, Drain Current - Continuous (TC = 25℃): 20A; Continuous (TC = 100℃): 12.5A; (3)IDM, Drain Current - Pulsed: 60 A; (4)VGSS, Gate-Source voltage: ± 30 V; (5)EAS, Single Pulsed Avalanche Energy: 690 mJ; (6)IAR, Avalanche Current: 20 A; (7)EAR, Repetitive Avalanche Energy: 20.8 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 208W; Derate above 25℃: 1.67W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum Lead Temperature for Soldering Purpose, 1/8 inch from Case for 5 Seconds: 300℃.

Features

FCB20N60TM features: (1)650V @TJ = 150℃; (2)Typ. RDS(on) = 0.15Ω; (3)Ultra low gate charge (typ. Qg = 75nC); (4)Low effective output capacitance (typ. Coss.eff = 165pF); (5)100% avalanche tested; (6)RoHS Compliant.