CY7C263-45WMB

Product Summary

The CY7C263-45WMB is high-performance 8192-word by 8-bit CMOS PROMs. The CY7C263-45WMB is packaged in 300-mil-wide and 600-mil-wide packages respectively, and do not power down when deselected. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C263-45WMB is plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance and programming yield. The EPROM cell requires only 12.5V for the supervoltage and low current requirements allow for gang programming. The EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming the product will meet DC and AC specification limits. Read is accomplished by placing an active LOW signal on CS. The contents of the memory location addressed by the address line (A0−A12) will become available on the output lines .

Parametrics

Absolute maximum ratings:(1)Storage Temperatures: –65°C to+150°C; (2)Ambient Temperature with Power Applied: –55°C to+125°C; (3)Supply Voltage to Ground Potential (Pin 24 to Pin 12): –0.5V to+7.0V; (4)DC Voltage Applied to Outputs in High Z State: –0.5V to+7.0V; (5)DC Input Voltage: –3.0V to + 7.0V; (6)DC Program Voltage (Pin 19 DIP, Pin 23 LCC): 13.0V; (7)Static Discharge Voltage: >2001V (per MIL-STD-883, Method 3015); (8)Latch-Up Current: >200 mA; (9)UV Exposure:7258 Wsec/cm2.

Features

Features:(1)CMOS for optimum speed/power; (2)Windowed for reprogrammability; (3)High speed; (4)Low power; (5)Super low standby power (7C261); (6)EPROM technology 100% programmable; (7)Slim 300-mil or standard 600-mil packaging available; (8)5V ± 10% VCC, commercial and military; (9)Capable of withstanding greater than 2001V static discharge; (10)TTL-compatible I/O; (11)Direct replacement for bipolar PROMs.

Diagrams