(China (Mainland))
Product Summary
The BUZ900 is silicon N-channel power MOSFET. This product is designed for use as complementary pair for high quality, high power amplifier application.
Parametrics
Absolute maximum ratings: (1)Drain–Source Voltage, VDSX: 160V; (2)Gate–Source Voltage, VGSS: ±14V; (3)Continuous Drain Current, ID: 16A; (4)Body Drain Diode, ID(PK): 16A; (5)Total Power Dissipation at Tcase = 25℃, PD: 250W; (6)Storage Temperature Range, Tstg: –55 to 150℃; (7)Maximum Operating Junction Temperature, Tj: 150℃; (8)Thermal Resistance Junction - Case, Rth: 0.5℃/W.
Features
Features: (1)High speed switching; (2)N–channel power MOSFET; (3)semefab designed and diffused; (4)High voltage (160V & 200V); (5)high energy rating; (6)enhancement mode; (7)integral protection diode; (8)P–channel also available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 BUZ900DP |
Other |
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Data Sheet |
Negotiable |
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BUZ900X4S |
Other |
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Data Sheet |
Negotiable |
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