Product Summary

The BU508A-M is a high voltage fast-switching NPN power transistor. The BU508A-M is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

Parametrics

BU508A-M absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 ℃: 125 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.

Features

BU508A-M features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.

Diagrams

BU508A-M block diagram

BU500
BU500

Other


Data Sheet

Negotiable 
BU505
BU505

STMicroelectronics

Transistors Bipolar (BJT) NPN Multiepitaxial Fast Swtch Trnsistr

Data Sheet

0-1: $0.81
1-10: $0.73
10-100: $0.69
100-250: $0.67
BU505D
BU505D

Other


Data Sheet

Negotiable 
BU505DF
BU505DF

Other


Data Sheet

Negotiable 
BU505F
BU505F

Other


Data Sheet

Negotiable 
BU506
BU506

Other


Data Sheet

Negotiable