(China (Mainland))
Product Summary
The BU508A-M is a high voltage fast-switching NPN power transistor. The BU508A-M is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
Parametrics
BU508A-M absolute maximum ratings: (1)Collector-Emitter Voltage (VBE = 0): 1500 V; (2)Collector-Emitter Voltage (IB = 0): 700 V; (3)Emitter-Base Voltage (IC = 0): 10 V; (4)Collector Current: 8 A; (5)Collector Peak Current (tp < 5 ms): 15 A; (6)Total Dissipation at Tc = 25 ℃: 125 W; (7)Storage Temperature: -65 to 150 ℃; (8)Max. Operating Junction Temperature: 150 ℃.
Features
BU508A-M features: (1)STMicroelectronics preferred salestypes; (2)high voltage capability (> 1500 V); (3)fully insulated package (U.L. compliant) for easy mounting.
Diagrams
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BU506D |
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BU506DF |
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BU506F |
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