(China (Mainland))
Product Summary
The BLF278 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. This device is used in broadcast transmitters in the VHF frequency range.
Parametrics
Absolute maximum ratings: (1)VDS, drain-source voltage: 125 V max; (2)VGS, gate-source voltage: ±20 V max; (3)ID, drain current (DC): 18 A max; (4)Ptot, total power dissipation at Tmb ≤25 ℃ ; total device; both sections equally loaded: 500 W max; (5)Tstg, storage temperature: -65 to 150 ℃ ; (6)Tj, junction temperature: 200 ℃ max.
Features
Features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
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 BLF278 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF278,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 250W VHF |
Data Sheet |
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BLF278/01,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS |
Data Sheet |
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