(China (Mainland))
Product Summary
The AS4C1M16E5-60TC is a high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) organized as 1,048,576 words × 16 bits. The AS4C1M16E5-60TC is fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in personal and portable PCs, workstations, and multimedia and router switch applications.
Parametrics
AS4C1M16E5-60TC absolute maximum ratings: (1)Input voltage: -1.0 to +7.0 V; (2)Input voltage (DQs): -1.0 to VCC + 0.5 V; (3)Power supply voltage: -1.0 +7.0 V; (4)Storage temperature (plastic): -65 +150 ℃; (5)Soldering temperature × time: 260 × 10 ℃ × sec; (6)Power dissipation: 1W; (7)Short circuit output current: 50mA.
Features
AS4C1M16E5-60TC features: (1)Organization: 1,048,576 words × 16 bits; (2)High speed: 45/50/60 ns RAS access time; 20/20/25 ns hyper page cycle time; 10/12/15 ns CAS access time; (3)Low power consumption; (4)Extended data out; (5)1024 refresh cycles, 16 ms refresh interval; (6)TTL-compatible, three-state DQ; (7)JEDEC standard package and pinout; (8)5V power supply (AS4C1M16E5); (9)3V power supply (AS4LC1M16E5); (10)Industrial and commercial temperature available.
Diagrams
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 AS4C1024 |
Other |
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Data Sheet |
Negotiable |
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AS4C1259 |
Other |
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Data Sheet |
Negotiable |
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AS4C16M16S-5TCN |
Alliance Memory |
DRAM 256M SDRAM 16M X 16 200MHz |
Data Sheet |
Negotiable |
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AS4C16M16S-6TAN |
Alliance Memory |
DRAM 256M (16M x 16) 3.3V SDRAM |
Data Sheet |
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AS4C16M16S-6TANTR |
Alliance Memory |
DRAM 256M (16M x 16) 3.3V SDRAM |
Data Sheet |
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AS4C16M16S-6TCN |
Alliance Memory |
DRAM 256M SDRAM 16M X 16 166MHz |
Data Sheet |
Negotiable |
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